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indium tin oxide thin films for organic light-emitting

indium tin oxide thin films for organic light-emitting

1999-5-26 · High-quality indium tin oxide (ITO) thin films (150–200 nm) were grown on glass substrates by pulsed laser deposition (PLD) without postdeposition annealing. The electrical, optical, and structural properties of these films were investigated as a function of substrate temperature, oxygen pressure, and film thickness. PLD provides very uniform ITO films

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thin-film materials | materials used by indium corporation

thin-film materials | materials used by indium corporation

Indium Corporation offers materials for thin film deposition by evaporation and sputtering, as well as sputtering targets for CIGS thin film solar cells

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ito | thin-film materials | materials used by indium

ito | thin-film materials | materials used by indium

Indium Tin Oxide (ITO, or tin-doped indium oxide) is a mixture of indium (III) oxide (In 2 O 3) and tin (IV) oxide (SnO 2), typically 90% In 2 O 3, 10% SnO 2 by weight. It is transparent and colorless when deposited as a thin film at thicknesses of 1000-3000

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indium–tin oxide films obtained by dc magnetron sputtering

indium–tin oxide films obtained by dc magnetron sputtering

[en] The indium–tin oxide (ITO) film as the antireflection layer and front electrodes is of key importance to obtaining high efficiency Si heterojunction (HJ) solar cells

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epitaxial indium tin oxide films deposited on yttrium

epitaxial indium tin oxide films deposited on yttrium

2021-1-15 · 1. Introduction. Indium tin oxide (tin-doped indium oxide, ITO), an n-type wide band gap semiconductor, has been a research focus in the fields of optoelectronic devices for many years because of the excellent electrical conductivity, highly infrared reflectance, and high transparency in

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effect of film thickness on the properties of indium tin

effect of film thickness on the properties of indium tin

2000-11-1 · Transparent conducting indium tin oxide (ITO) thin films (40–870 nm) were grown by pulsed laser deposition on amorphous substrates and the structural, electrical, and optical properties of these films were investigated. Films

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theoretical study of infrared emissivity of indium tin

theoretical study of infrared emissivity of indium tin

Indium tin oxide thin films have been the subject of extensive research due to their attractive optical and electronic properties. The effects of essential processing steps carried out on these

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second harmonic generation investigation of indium tin

second harmonic generation investigation of indium tin

2000-4-3 · Abstract. Second harmonic generation (SHG) from indium tin oxide (ITO) films on glass substrates has been investigated in detail for the first time. Significant SHG intensity and non-linear optical anisotropy was observed from ITO films due to orientation of the crystal cells. The SHG reached a maximum in intensity at an incident angle of 60°

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role of phase separation in nanocomposite indium-tin-oxide

role of phase separation in nanocomposite indium-tin-oxide

2021-5-1 · Phase separation observed in nanocomposite indium-tin-oxide (ITO) films. • Non-stoichiometric In 1.8 Sn 0.2 O 2.5 films showed presence of metallic In clusters.. Increased power factor in In 1.8 Sn 0.2 O 2.5 films.. High optical transmission in In 1.8 Sn 0.2 O 3 films with reduced power factor

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low resistivity indium–tin oxide transparent conductive

low resistivity indium–tin oxide transparent conductive

1998-6-4 · Low resistivity indium–tin oxide transparent conductive films. I. Effect of introducing H 2 O gas or H 2 gas during direct current magnetron sputtering ... Film transmittance stayed constant with or without H 2 O gas addition. Similar effect was

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osa | effects of cumulative ion bombardment on ito films

osa | effects of cumulative ion bombardment on ito films

Transparent conducting indium tin oxide (ITO) thin films are deposited on polyethylene terephthalate (PET) and silicon (Si) substrates by DC magnetron sputtering at room temperature. The electrical and optical properties of the ITO films are then investigated as a function of the cumulative sputtering gas; a parameter newly proposed in this study and defined as the product of the gas (argon

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modulating mechanism of the lspr and sers in ag/ito film

modulating mechanism of the lspr and sers in ag/ito film

Indium tin oxide (ITO) films are representative transparent conducting oxide media for organic light-emitting diodes, liquid crystal displays, and solar cell applications. Extending the utility of

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computational study and characteristics of in2s3 thin

computational study and characteristics of in2s3 thin

2019-3-11 · Indium oxide thin film deposited onto glass substrate has a direct band gap E g = 3.95 eV which is higher than the value mentioned by Chong et al (2.9 to 3.1 eV) and closer to the values obtained by Naseem et al (Eg = 3.92 eV) for indium oxide films obtained by evaporation of indium

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carrier concentration dependence of optical kerr

carrier concentration dependence of optical kerr

2006-1-4 · Optical Kerr nonlinearity (n2) in n-type indium tin oxide (ITO) films coated on glass substrates has been measured using Z-scans with 200-fs laser pulses at wavelengths ranging from 720 to 780 nm. The magnitudes of the measured nonlinearity in the ITO films were found to be dependent on the carrier concentration with a maximum n2-value of 4.1×10-5 cm2/GW at 720-nm wavelength and an electron

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thin film products | umicore

thin film products | umicore

Thin Film Products. Umicore is a leading developer and manufacturer of sputtering targets and evaporation materials for all microelectronic / optical applications. The extensive product portfolio is supported by an excellent recycling program, state-of-the-art R&D

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